050-7054 rev d 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak bll sll apt6029bll apt6029sll 600v 21a 0.290 ?? ?? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package power mos 7 r mosfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 10.5a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts apt6029bfll_sfll 600 2184 3040 300 2.40 -55 to 150 300 2130 1210 min typ max 600 0.290 100500 100 35 downloaded from: http:///
dynamic characteristics apt6029bll_sll 050-7054 rev d 9-2004 characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 21a ) reverse recovery time (i s = - 21a , dl s /dt = 100a/s) reverse recovery charge (i s = - 21a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 2184 1.3 580 7.92 8 symbol r jc r ja min typ max 0.42 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 21a @ 25c resistive switching v gs = 15v v dd = 300v i d = 21a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 21a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d = 21a, r g = 5 ? min typ max 2615 420 4765 13 36 95 23 4 225 90 360110 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 5.49mh, r g = 25 ? , peak i l = 21a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 21a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.450.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
0 5 10 15 20 25 30 0 2 4 6 8 10 0 10 20 30 40 50 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 8070 60 50 40 30 20 10 0 2520 15 10 50 2.52.0 1.5 1.0 0.5 0.0 6050 40 30 20 10 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 050-7054 rev d 9-2004 5v 5.5v 6v 6.5 v gs =15 &10v 7v 8v t j = +125c t j = +25c t j = -55c v gs =10v v gs =20v apt6029bll_sll typical performance curves v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, lo w voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ i d = 10.5a i d = 10.5a v gs = 10v v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0.1610.259 0.00994f0.236f power (watts) rc model junctiontemp. ( c) case temperature. ( c) downloaded from: http:///
050-7054 rev d 9-2004 apt6029bll_sll v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage 10,000 1,000 100 10 200100 10 1 v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 600 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 90 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 8450 10 1 1612 84 0 10ms 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds =250v v ds =100v v ds =400v i d = 21a t j =+150c t j =+25c c rss c iss c oss i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance 0 5 101520253035 0 5101520253035 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 40 45 50 5040 30 20 10 0 700600 500 400 300 200 100 0 5040 30 20 10 0 800700 600 500 400 300 200 100 0 v dd = 400v r g = 5 ? t j = 125c l = 100h v dd = 400v r g = 5 ? t j = 125c l = 100h v dd = 400v i d = 21a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 400v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. downloaded from: http:///
050-7054 rev d 9-2004 figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions drain current drain voltage gate voltage 5 % 10 % 5 % switching energy 10 % t d(on) 90% t r t j = 125 c apt6029bll_sll 90% t d(off) gate voltage drain voltage drain current t j = 125 c 10% 90% t f switching energy 15.49 (.610)16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt15df60 downloaded from: http:///
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